CG2H30070F

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CG2H30070F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CG2H30070F
Richardson RFPD #: CG2H30070F
Description: RF Power Transistor
Min/Mult: 30/30
Datasheet CG2H30070F Data Sheet
EDA/CAD Models

CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 500
Maximum Frequency (MHz) 3000
Pout (W) 70
Gain (dB) 17.7
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W) 85
Thermal Resistance (°C/W) 1.5
Package Name
Package Type Ceramic Flanged

Datasheets

  cg2h30070f

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