CGH27030P

Stock Availability: 13

CGH27030P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH27030P
Richardson RFPD #: CGH27030P
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH27030P Data Sheet
EDA/CAD Models

CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030P ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in a pill package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 30
Maximum Frequency (MHz) 3000
Pout (W) 4
Gain (dB) 14.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal WIMAX
Pulse Width
Duty Cycle
Efficiency (%) 28
P1dB (W)
Psat (W) 30
Thermal Resistance (°C/W) 4.8
Package Name
Package Type Ceramic Flangeless

Change Notice

  MACOM_PCN-01753

Datasheets

  cgh27030

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 Ready for Immediate Shipment
Stock: 13 Units

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Unit Price:
1:  $63.5500