CGHV35150P

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CGHV35150P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV35150P
Richardson RFPD #: CGHV35150P
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet CGHV35150P Data Sheet
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CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a pill package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2900
Maximum Frequency (MHz) 3500
Pout (W) 150
Gain (dB) 13.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 300
Duty Cycle 20
Efficiency (%) 47
P1dB (W)
Psat (W) 150
Thermal Resistance (°C/W) 0.86
Package Name 440206
Package Type Ceramic Flangeless

Datasheets

  cghv35150

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