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Product image for reference only. For precise specifications, refer to datasheet.
CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217.
cghv35400f
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