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CGHV35400F

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CGHV35400F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV35400F
Richardson RFPD #: CGHV35400F
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGHV35400F Data Sheet
EDA/CAD Models

CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2900
Maximum Frequency (MHz) 3500
Pout (W) 400
Gain (dB) 11.3
Supply Voltage (V) 50
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 500
Duty Cycle 10
Efficiency (%) 69
P1dB (W)
Psat (W) 500
Thermal Resistance (°C/W) 0.3
Package Name 440225
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01996

Datasheets

  cghv35400f

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