CHZ180A-SEB


Stock Availability: 5

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHZ180A-SEB
Richardson RFPD #: CHZ180A-SEB/26
Description: RF Power Transistor
Min/Mult: 1
Datasheet CHZ180A-SEB/26 Data Sheet
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180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5um gate length GaN HEMT process. It is based on Quasi-MMIC technology . It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 180
Gain (dB) 20
Supply Voltage (V) 45
50 Ohm Matching Input
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 52
P1dB (W)
Psat (W) 200
Thermal Resistance (°C/W) 0.75
Package Name
Package Type Ceramic Flanged

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Unit Price:
1:  $685.9300