CMPA1C1D060D


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA1C1D060D
Richardson RFPD #: CMPA1C1D060D
Description: RF & MW Power Amplifier
Min/Mult: 10/1
Datasheet CMPA1C1D060D Data Sheet
EDA/CAD Models

CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 12700
Maximum Frequency (MHz) 13250
Gain (dB) 26
Gain Flatness (dB)
Efficiency (%) 30
Supply Voltage (V) 40
P1dB (dBm)
Psat (W) 60
PAvg (W)
Package Type Die

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