CMPA601C025F


Stock Availability: 63

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CMPA601C025F
Richardson RFPD #: CMPA601C025F
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CMPA601C025F Data Sheet
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CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 6000
Maximum Frequency (MHz) 12000
Gain (dB) 34
Gain Flatness (dB)
Efficiency (%) 35
Supply Voltage (V) 28
P1dB (dBm)
Psat (W) 40
PAvg (W)
Package Type Flanged

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