CMPA601C025F
Stock Availability: 13
| Manufacturer: | MACOM Technology Solutions |
|---|---|
| Mfg #: | CMPA601C025F |
| Richardson RFPD #: | CMPA601C025F |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CMPA601C025F 
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| EDA/CAD Models |
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CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms.
Datasheets