GTRA384802FC-V1-R0

Stock Availability: 87

GTRA384802FC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTRA384802FC-V1-R0
Richardson RFPD #: GTRA384802FC-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTRA384802FC-V1 Data Sheet
EDA/CAD Models

The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3600
Maximum Frequency (MHz) 3800
Pout (W) 63
Gain (dB) 13
Supply Voltage (V) 48
50 Ohm Matching
Test signal WCDMA
Pulse Width
Duty Cycle
Efficiency (%) 42
P1dB (W)
Psat (W) 400
Thermal Resistance (°C/W) 1.6
Package Name H-37248C-4
Package Type Ceramic Flangeless

Datasheets

  gtra384802fc

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Stock: 87 Units

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