GTVA107001EC-V1-R0

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GTVA107001EC-V1 MACOM Technology Solutions
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Manufacturer: MACOM Technology Solutions
Mfg #: GTVA107001EC-V1-R0
Richardson RFPD #: GTVA107001EC-V1
Description: RF Power Transistor
Min/Mult: 1
Datasheet GTVA107001EC-V1 Data Sheet
EDA/CAD Models

GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 960
Maximum Frequency (MHz) 1215
Pout (W) 700
Gain (dB) 20
Supply Voltage (V) 50
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 128
Duty Cycle 10
Efficiency (%) 70
P1dB (W)
Psat (W) 890
Thermal Resistance (°C/W) 0.25
Package Name H-36248-2
Package Type Ceramic Flanged

Datasheets

  gtva107001ec

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