Currently not available for sale in the U.S.
Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0
mm x 6.0 mm package size.
Features
- Bi-directional blocking capability
- GaN-on-Silicon E-mode HEMT technology
- Ultra-low on resistance
Applications
- BMS battery protection
- High side load switch in bi-directional converter
- Switch circuits in multiple power supplier system
