MRFE6VP61K25HR5

MRFE6VP61K25HR5
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer:
Mfg #: MRFE6VP61K25HR5
Richardson RFPD #: MRFE6VP61K25HR5
Description: RF Power Transistor
Min/Mult: 50/50
Datasheet MRFE6VP61K25HR5 Data Sheet
EDA/CAD Models

High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 22.9
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.6
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 0.15
Package Name NI-1230
Package Type Ceramic Flanged

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Brochure

  Freescale Industrial, Scientific & Medical Solutions Brochure

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP61K25H

Reference Designs

  RDMRFE6VP61K25H_FM_BCAST Reference Design

  RDMRFE6VP61K25H_VHF_BCAST Reference Design

White Papers

  Freescale 50VRFLDMOSWP White Paper

Full Reel

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
50:  $282.8100

Must order in multiple of 50

Cut Tape

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
50:  $319.5900