MRFE6VP61K25HR6

MRFE6VP61K25HR6 NXP Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP61K25HR6
Richardson RFPD #: MRFE6VP61K25HR6
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VP61K25HR6 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and output design allows wide frequency range utilization, between 1.8 and 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 22.9
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.6
P1dB (W)
Psat (W) 1500
Thermal Resistance (°C/W) 0.15
Package Name NI-1230H-4S
Package Type Ceramic Flanged

Application Notes

  Freescale Thermal Measurement Methodology of RF Power Amplifiers

  Freescale Using Data Sheet Impedances for RF LDMOS Devices

Brochure

  Freescale Industrial, Scientific & Medical Solutions Brochure

Change Notice

  NXP_PCN_202504008I

Datasheets

  MRFE6VP61K25H

Reference Designs

  RDMRFE6VP61K25H_VHF_BCAST Reference Design

  RDMRFE6VP61K25H_FM_BCAST Reference Design

White Papers

  Freescale 50VRFLDMOSWP White Paper

Full Reel

 Ready for Immediate Shipment
Stock: 12,357 Units
Mfg. Stock: 10,000 Units
Unit Price: Pricing in (USD)
1:  $296.7100

Cut Tape

 Ready for Immediate Shipment
Stock: 147 Units
Unit Price: Pricing in (USD)
1:  $296.0000