MRFE6VP61K25HR6


Stock Availability: 12

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: NXP Semiconductors
Mfg #: MRFE6VP61K25HR6
Richardson RFPD #: MRFE6VP61K25HR6
Description: RF Power Transistor
Min/Mult: 1
Datasheet MRFE6VP61K25HR6 Data Sheet
EDA/CAD Models

This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and output design allows wide frequency range utilization, between 1.8 and 600 MHz.


Key Attributes Value Search Similar
Technology LDMOS
Minimum Frequency (MHz) 1.8
Maximum Frequency (MHz) 600
Pout (W) 1250
Gain (dB) 22.9
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74.6
P1dB (W)
Psat (W) 1500
Thermal Resistance (°C/W) 0.15
Package Name NI-1230H-4S
Package Type Ceramic Flanged

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Ready for Immediate Shipment

Stock: 12 Units

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Pricing in (USD)

Unit Price:
1:  $1,017.5800
10:  $990.8100
25:  $965.4000
50:  $940.0800
100:  Get Quote